Anette Eleonora Gunnæs


Date and place of birth: 14th. May 1968, Halden, Norway             


Married to Spyridon Diplas, one daughter born 28.05.2004


Associate Professor, Department of Physics, University of Oslo, Norway, January 2004-

Post.doc, Department of Physics, University of Oslo, October 2000 – December 2003

Research Fellow, University of Surrey, UK, June 1998 - September 2000

Dr. Scient degree in Physics, University of Oslo, Norway, 11th. March 1998



Scientific specialisation:

Microstructure investigations by use of analytical Transmission Electron Microscopy (TEM) where one can obtain chemical and structural information down to the atomic scale from sub-nanometre areas in one experiment. TEM cross section sample preparation of various inorganic materials including sol-gel thin films and semiconductors.


A selection of publications:


[1] M.H. Sørby, A.E. Gunnæs, O.M. Løvvik, H.W. Brinks, H. Fjellvåg, B.C. Hauback, “The crystal structure of Zr
2NiD4.5“, Acta Cryst B, in press, 2006.


[2] A.E. Gunnæs, A. Skogstad, A. Olsen, E. Bye, Morphology and structure of airborn beta-SiC fibres produced during the industrial production of non-fibrous silicon carbide. Journal of Materials Science, 40, 6011-6017 2005.


[3] F. Tyholdt, A.E. Gunnæs,  S. Jørgensen, H. Fjellvåg, “Synthesis of oriented BiFeO3 thin films by chemical solution deposition: Phase, texture, and microstructural development”,  Journal of Materials Research, 20 2127-2139, 2005.

[4] C. Heng, T. Finstad, P. Storås, Y. Li, A.E. Gunnæs, O. Nilsen, Ola, ”The 1.54 µm photoluminescence from an (Er,Ge) co-doped SiO2 film deposited on Si by rf magnettron sputtering”, Applied Physics Letters, 85, 4475-4477, 2004.

[5] E. Marstein, A.E Gunnæs, A. Olsen, T. Finstad, R. Turan, U. Serincan, ”Introduction of Si/SiO2 interface states by annealing Ge-implanted films”, Journal of Applied Physics, 96 4308-4312, 2004.

[6] R. Haugsrud, A.E. Gunnæs, O. Nilsen, “High-Temperature Oxidation of Ni Coated with La2O3 by Atomic-Layer Chemical-Vapor Deposition (ALCVD)”, Oxidation of Metals, 59 215-232, 2003.


[7] E.Marstein, A.E. Gunnæs, U. Serincan, S. Jørgensen, A. Olsen, R. Turan, T. Finstad, ”Mechanisms of void formation in Ge implanted SiO2 films”, Nuclear Instruments and Methods in Physics Reseach B, 207 424-433, 2003.


[8] E. Marstein, A.E. Gunnæs, U. Serincan, R. Turan, A. Olsen, T. Finstad, ”Nanocrystal and nanocluster formation and axidation in annealed Ge-implanted SiO2 films”, Surface and coatings technology, 158-159 544-547, 2002.


[9] R. Haugsrud, A.E. Gunnæs, C.R. Simon, “Effects of Sol-Gel-Derived Silca Coatings on High-Temperature Oxidation of Ni”, Oxidation of Metals; 56 453-465, 2001.