Anette Eleonora Gunnæs
Date and place of birth: 14th. May 1968, Halden, Norway
Married to Spyridon Diplas, one daughter born 28.05.2004
Associate Professor, Department of Physics, University of Oslo, Norway, January 2004-
Post.doc, Department of Physics, University of Oslo, October 2000 December 2003
Research Fellow, University of Surrey, UK, June 1998 - September 2000
Dr. Scient degree in Physics, University of Oslo, Norway, 11th. March 1998
Microstructure investigations by use of analytical Transmission Electron Microscopy (TEM) where one can obtain chemical and structural information down to the atomic scale from sub-nanometre areas in one experiment. TEM cross section sample preparation of various inorganic materials including sol-gel thin films and semiconductors.
A selection of publications:
 M.H. Sørby, A.E. Gunnæs, O.M. Løvvik, H.W. Brinks, H. Fjellvåg, B.C. Hauback, The crystal structure of Zr2NiD4.5, Acta Cryst B, in press, 2006.
 A.E. Gunnæs, A. Skogstad, A. Olsen, E. Bye, Morphology and structure of airborn beta-SiC fibres produced during the industrial production of non-fibrous silicon carbide. Journal of Materials Science, 40, 6011-6017 2005.
 F. Tyholdt, A.E. Gunnæs,
S. Jørgensen, H. Fjellvåg,
Synthesis of oriented BiFeO3 thin films by chemical
solution deposition: Phase, texture, and microstructural
development, Journal of Materials Research,
20 2127-2139, 2005.
 C. Heng, T. Finstad, P.
Storås, Y. Li, A.E. Gunnæs, O. Nilsen, Ola, The 1.54 µm
photoluminescence from an (Er,Ge) co-doped SiO2 film deposited on Si
by rf magnettron sputtering, Applied Physics Letters,
85, 4475-4477, 2004.
Marstein, A.E Gunnæs, A. Olsen, T. Finstad, R. Turan, U.
Serincan, Introduction of Si/SiO2
interface states by annealing Ge-implanted films, Journal of Applied
Physics, 96 4308-4312, 2004.
 R. Haugsrud, A.E. Gunnæs, O. Nilsen, High-Temperature Oxidation of Ni Coated with La2O3 by Atomic-Layer Chemical-Vapor Deposition (ALCVD), Oxidation of Metals, 59 215-232, 2003.
 E.Marstein, A.E. Gunnæs, U. Serincan, S. Jørgensen, A. Olsen, R. Turan, T. Finstad, Mechanisms of void formation in Ge implanted SiO2 films, Nuclear Instruments and Methods in Physics Reseach B, 207 424-433, 2003.
 E. Marstein, A.E. Gunnæs, U. Serincan, R. Turan, A. Olsen, T. Finstad, Nanocrystal and nanocluster formation and axidation in annealed Ge-implanted SiO2 films, Surface and coatings technology, 158-159 544-547, 2002.