| 1. | A. Yu. Kuznetsov, J. S. Christensen, M. K. Linnarsson, B. G. Svensson, H. H. Radamson, J. Grahn, G. Landgren Diffusion of phosphorus in strained Si/SiGe/Si Heterostructures Mat. Res. Soc. Symp. Proc. Vol. 568 p. 271 (1999) |
| 2. | Nylandsted-Larsen, J. J. Coubet, P. Mejlholm, J. S. Christensen, M. Fanciulli, H. P. Gunnlaugsson, G. Weyer, J. Wulff Petersen, A. Resende, M. Kaukonen, R. Jones, S. Öberg, P. R. Briddon, B. G. Svensson, J. L. Lindström, S. Dannefaer Tin-vacancy acceptor levels in electron-irradiated n-type silicon Phys. Rev. B 62, 4535 (2000) |
| 3. | J. S. Christensen, A. Yu. Kuznetsov, H. H. Radamson, B. G. Svensson Phosphorus diffusion in Si1-xGex Defect and Diffusion Forum vols. 194-199 pp. 709-716 (2001) |
| 4. | M. S. Janson, M. K. Linnarson, J. S. Christensen, P. Lévêque, A. Yu. Kuznetsov, H. H. Radamson, A. Hallén, A. Nylandsted-Larsen, B. G. Svensson Diffusion of dopants and impurities in device structures of SiC, SiGe and Si Defect and Diffusion Forum vols. 194-199 pp. 597-610 (2001) |
| 5. | J. S. Christensen, A. Yu. Kuznetsov, H. H. Radamson, B. G. Svensson Phosphorus diffusion in Si; influence of annealing conditions Mat. Res. Symp. Proc. Vol. 669, J3.9.1 (2001) |
| 6. | P. Lévêque, J. S. Christensen, A. Yu. Kuznetsov, B. G. Svensson, A. Nylandsted-Larsen Influence of boron concentration on the enhanced diffusion observed after irradiation of boron delta-doped silicon at 570°C Nucl. Instr. and Meth. in Phys. Res. B 178 (2001) p. 337. |
| 7. | A. Yu. Kuznetsov, J. S. Christensen, E. V. Monakhov, A.-C. Lindgren, H. H. Radamson, A. Nylandsted-Larsen, B. G. Svensson Dopant redistribution and formation of electrically active complexes in SiGe Mat. Sci. in Semiconductor Processing 4 (2001) 217-223 |
| 8. | P. Lévêque, A. Yu. Kuznetsov, J. S. Christensen, B. G. Svensson, A. Nylandsted-Larsen Irradiation enhanced diffusion of boron in delta-doped silicon J. Appl. Phys. 89(10) (2001) p. 5400 |
| 9. | P. Lévêque, A. Yu. Kuznetsov, J. S. Christensen, B. G. Svensson, A. Nylandsted-Larsen Influence of boron on radiation enhanced diffusion of antomony in delta-doped silicon J. Appl. Phys. 91(6) (2002) |
| 10. | J. S. Christensen, A. Yu. Kuznetsov, H. H. Radamson, B. G. Svensson Phosphorus and Boron Diffusion in Silicon Under Equilibrium Conditions Appl. Phys. Lett. 82, 2254 (2003) |
| 11. | J. S. Christensen, A. Yu. Kuznetsov, H. H. Radamson, B. G. Svensson Phosphorus Diffusion in Strained and Relaxed Si1-xGex J. Appl. Phys. 94, 6533 (2003) |
| 12. | E. Suvar, J. S. Christensen, A. Yu. Kuznetsov, and H. H. Radamson Influence of doping on thermal stability of Si/Si1-xGex/Si heterostructures Mat. Sci. Eng. B 102, 53 (2003) |
| 13. | A. Peeva, R. Kögler, W. Skorupa, J. S. Christensen, and A. Yu. Kuznetsov Spatial distribution of cavities in silicon formed by ion implantation generated excess vacancies J. Appl. Phys. 95(9), 4738 (2004) |
| 14. | A. Portavoce, P. Gas, I. Berbezier, A. Rhonda, J. S. Christensen, A. Yu. Kuznetsov, and B. G. Svensson Sb lattice diffusion in Si1-xGex/Si(001) heterostructures: Chemical and Stress effects Phys. Rev. B 69, 155415 (2004) |