1. J. F. Cardenas, A. Gromov, and E. E. B. Campbell Submitted to J. Phys. Chem. C Debundling in single walled carbon nanotube dispersions investigated by Raman spectroscopy.

2. J. F. Cardenas Carbon 46, 1327 (2008). Protonation and sonication effects on aggregation sensitive Raman features of single wall carbon nanotubes.

3. J. F. Cardenas and A. Gromov Chem. Phys. Lett. 442, 409 (2007) Double Resonance Raman Scattering in Solubilised Single Walled Carbon Nanotubes.

4. J. F. Cardenas and M. Glerup Nanotechnology 17, 5212 (2006). The influence of surfactants on the distribution of the radial breathing modes of single walled carbon nanotubes.

5. J. F. Cardenas Chem. Phys. Lett. 430, 367 (2006). Diameter dependence of second-order Raman features of graphene tubes.

6. J. F. Cardenas and G. Gröbner J. Electron Spectrosc. Related Phenom. 152, 87 (2006). The influence of temperature and X-ray dose on the deprotonation of lyophilized phenylalanine during X-ray photoelectron spectroscopy.

7. Z.-B. Zhang, J. Cardenas, E. E. B. Campbell, and S.-L. Zhang, Appl. Phys. Lett. 87, 043110 (2005). Reversible surface functionalization of carbon nanotubes for fabrication of field-effect transistors.

8. J. F. Cardenas and G. Gröbner J. Electron Spectrosc. Related Phenom. 148, 96 (2005). Lyophilized histidine investigated using X-ray photoelectron spectroscopy and cryogenics: Deprotonation in vacuum.

9. J. F. Cardenas, Colloids and Surfaces A: Physicochem. Eng. Aspects 266, 147 (2005). The effect of the discrete nature of ions on the excess adsorption of Na+ and Cl? at the silica-aqueous interface.

10. J. Cardenas, Colloids Surf. 252, 213 (2005), Surface charge of silica determined by X-ray photoelectron spectroscopy.

11. M. Uo, A. Berglund, J. Cardenas, L. Pohl, F. Watari, M. Bergman, and S. Sjöberg. Dental Materials 19, 639 (2003). Surface analysis of dental amalgams by X-ray photoelectron spectroscopy and X-ray diffraction.

12. J. Cardenas and S. Sjöberg, Surf. Sci. 532-535C, 1104 (2003), Investigation of the Titaniumdioxide-aqueous solution interface using XPS and cryogenics.

13. J. Cardenas, N. Lockyer, and J. Vickerman, Secondary Ion Mass Spectrometry: SIMS XII, A. Benninghoven, P. Bertrand, H.-N. Migeon and H.W. Werner (Eds), Elsevier Science, Amsterdam (2000), pp. 429. Surface analysis by ToF-SIMS and Laser Postionisation of ion induced modified Si oxide and Mo oxide surfaces.

14. J. Cardenas, B. G. Svensson, and M. Petravic, J. Appl. Physics 84, 4809 (1998). Evidence for the influence of thermal spikes on ion induced mixing in Si at energies between 3 and 300 keV.

15. J. Cardenas, B. G. Svensson, W. -X. Ni, K. B. Joelsson, and G. V. Hansson, Appl. Phys. Lett. 73, 3088 (1998). Injection of self-interstitials during sputter depth profiling of Si at room temperature.

16. J. Cardenas and B. G. Svensson, Proc. Eleventh Inter. Conf. on SIMS (John Wilwy & Sons), 335 (1997). Superposition of characteristic length by the diffusion model; Experiment and simulation.

17. B. G. Svensson, M. K. Linnarsson, J. Cardenas, and M. Petravic, Nucl. Instr. Meth. Phys. Res. B, 136-138, 1034 (1998). SIMS analysis of epitaxial layers for power- and micro- electronics.

18. J. Cardenas and B. G. Svensson, Proc. Tenth Inter. Conf. on SIMS (John Wiley & Sons), 525 (1995). Erosion of Si and SiGe by O2+ ions under oxygen flooding; Energy and angular dependence.

19. A. Yu. Kuznetsov, J. Grahn, J. Cardenas, B. G. Svensson, J. Lundsgaard Hansen, and A. Nylandsted Larsen, Phys. Rev. B 58, R13355 (1998). Effect of injection of Si interstitials on Sb diffusion in Si/Si1-xGex/Si structures.

20. A. Yu. Kuznetsov, J. Cardenas, J. Grahn, B. G. Svensson, J. Lundsgaard Hansen, and A. Nylandsted Larsen, Mat. Res. Soc. Symp. Proc. 510, 119 (1998). Control of the redistribution of Sb in strained SiGe layers using point defect injection.

21. A. Yu. Kuznetsov, J. Cardenas, D. Schmidt, B. G. Svensson, J. Lundsgaard Hansen and A. Nylandsted Larsen, Phys. Rev. B, 59 7274 (1999). Sb enhanced diffusion in strained Si1-xGex: dependence on biaxial compression. Sb enhanced diffusion in strained Si1-xGex: dependence on biaxial compression.

22. A. Yu. Kuznetsov, J. Cardenas, B.G. Svensson, J. Lundsgaard Hansen and A. Nylandsted Larsen, Mat. Res. Soc. Symp. Proc. 527, 435 (1998). Activation enthalpy of Sb diffusion in biaxially compressed SiGe layers.

23. W. -X. Ni, G. V. Hansson, J. Cardenas, B. G. Svensson, Thin Solid Films 321, 131 (1998). Role of strain in dopant surface segregation during Si and SiGe growth by molecular beam epitaxy.

24. J. Cardenas, S. -L. Zhang, B. G. Svensson, S. Hatzikonstantinidou, and C. S. Petersson, Physica Scripta T54, 198 (1994). Interdiffusion and phase formation during thermal processing of Co/Ti/Si(100) structure.

25. J. Cardenas, S. -L. Zhang, B. G. Svensson, C. S. Petersson, Mat. Res. Soc. Symp. Proc. 402, 155 (1996). Formation of epitaxial CoSi2 layers grown from the interaction of Co/Ti bilayers with Si <100> substrates.

26. J. Cardenas, S. -L. Zhang, B. G. Svensson, C. S. Petersson, J. Appl. Phys. 80, 762 (1996). The formation of inhomogeneities in epitaxial CoSi2 layers grown from the interaction of Co/Ti bilayers with Si <100> substrates.

27. D. Mangelinck, J. Cardenas, B. G. Svensson, Microel. Eng. 37-38, 467 (1997). Arsenic solubility in single crystalline cobalt disilicide.

28. D. Mangelinck, J. Cardenas, F. M d'Heurle, P. Gas and B. G. Svensson., J. Appl. Phys., 86, 4908 (1999). Solid solubility of arsenic in cobalt disilicide and redistribution at the disilicide/silicon interface.

29. W.-X. Ni, K. B. Joelsson, C. X. Du, I. A. Buyanova, G. Pozina; W. -M. Chen, G. V. Hansson, B. Monemar, J. Cardenas, Appl. Phys. Lett. 70, 3383 (1997). Er/O and Er/F doping during molecular beam epitaxial growth of Si layers for efficient 1.54 mm light emission.

30. A. Pisch, J. Cardenas, B. G. Svensson, C. S. Petersson, Mat. Res. Soc. Symp. Proc. 402, 51 (1996). Diffusion of arsenic in single crystalline CoSi2.

31. C. Zaring, A. Pisch, J. Cardenas, P. Gas, B. G. Svensson, J. Appl. Phys. 80, 2742 (1996). Solid solubility and diffusion of boron in single-crystalline cobalt disilicide.